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| DSEP 8-06B HiPerFREDTM Epitaxial Diode with soft recovery Preliminary Data VRSM V 600 VRRM V Type A C IFAV = 10 A VRRM = 600 V trr = 30 ns TO-220 AC C 600 DSEP 8-06B A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 125C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 0.9 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 10 50 0.1 0.1 -55...+175 175 -55...+150 A A Features A q mJ A C C C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 60 0.4...0.6 2 Applications q q q Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 10 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 60 0.25 1.66 2.66 2.5 0.5 A mA V V K/W K/W ns q q q q q VF y RthJC RthCH trr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages q IF = 1 A; -di/dt = 50 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 12 A; -diF/dt = 100 A/s TVJ = 100C 30 2.4 A q q Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see outlines.pdf (c) 2002 IXYS All rights reserved 1-1 230 IXYS reserves the right to change limits, test conditions and dimensions. |
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